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dc.contributor.authorD’Souza, A.I.
dc.contributor.authorRobinson, E.
dc.contributor.authorIonescu, A. C.
dc.contributor.authorOkerlund, D.
dc.contributor.authorde Lyon, T. J.
dc.contributor.authorSharifi, H.
dc.contributor.authorRoebuck, M.
dc.contributor.authorYap, D.
dc.contributor.authorRajavel, R. D.
dc.contributor.authorDhar, N.
dc.contributor.authorWijewarnasuriya, P. S.
dc.contributor.authorGrein, Christoph
dc.date.accessioned2013-11-22T23:07:10Z
dc.date.available2013-11-22T23:07:10Z
dc.date.issued2012-10
dc.identifier.bibliographicCitationD'Souza AI, Robinson E, Ionescu AC, et al. Electrooptical Characterization of MWIR InAsSb Detectors. Journal of Electronic Materials. Oct 2012;41(10):2671-2678. DOI: 10.1007/s11664-012-2182-7en_US
dc.identifier.issn0361-5235
dc.identifier.urihttp://hdl.handle.net/10027/10643
dc.description© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. DOI: 10.1007/s11664-012-2182-7en_US
dc.description.abstractInAs1-xSbx material with an alloy composition of the absorber layer adjusted to achieve 200K cutoff wavelengths in the 5 μm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response and Jdark-Vd measurements were acquired as a function of temperature. Based on absorption coefficient information in the literature and spectral response measurements of the midwave infrared (MWIR) nCBn detectors, an absorption coefficient formula α(Ε, x, T) is proposed. Since the presently suggested absorption coefficient is based on limited data, additional measurements of material and detectors with different x values and as a function of temperature should refine the absorption coefficient, providing a more accurate parametrization. Material electronic structures were computed using a k•p formalism. From the band structure, dark current density (Jdark) as a function of bias (Vd) and temperature (T) were calculated and matched to Jdark-Vd at fixed T and Jdark-T at constant Vd curves. There is a good match between simulation and data over a wide range of bias, but discrepancies that are not presently understood exist near zero bias.en_US
dc.description.sponsorshipThis work was supported by DARPA under contract N66604-09-C-3652 (Dr. Nibir Dhar, DARPA Program Manager). However, “The views expressed are those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government.” This is in accordance with DoDI 5230.29, January 8, 2009.en_US
dc.language.isoen_USen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.subjectMWIR barrier detectorsen_US
dc.subjectphoton trap structuresen_US
dc.titleElectro-Optical Characterization of MWIR InAsSb Detectorsen_US
dc.typeArticleen_US


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