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dc.contributor.authorDasgupta, Anindya.en_US
dc.date.accessioned2014-03-17T19:53:14Z
dc.date.available2014-03-17T19:53:14Z
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10027/11547
dc.language.isoenen_US
dc.subjectEngineering, Chemical.en_US
dc.titleProcess-property-structure relationship of silicon and silicon-germanium oxynitrides.en_US
thesis.degree.grantorUniversity of Illinois at Chicago.en_US
thesis.degree.levelDoctoralen_US
thesis.degree.namePhD, Doctor of Philosophyen_US
dc.type.genrethesisen_US
dc.type.materialtexten_US


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