Show simple item record

dc.contributor.authorBanerjee, Koushik
dc.contributor.authorHuang, Jun
dc.contributor.authorGhosh, Siddhartha
dc.date.accessioned2012-08-17T04:25:45Z
dc.date.available2012-08-17T04:25:45Z
dc.date.issued2011-11
dc.identifier.bibliographicCitationBanerjee, K., Huang, J., & Ghosh, S. 2011. Modeling and simulation of long-wave infrared InAs/GaSb strained layer superlattice photodiodes with different passivants. Infrared Physics & Technology, 54(6): 460-464. http://dx.doi.org/10.1016/j.infrared.2011.08.003en
dc.identifier.issn1350-4495
dc.identifier.otherhttp://dx.doi.org/10.1016/j.infrared.2011.08.003
dc.identifier.urihttp://hdl.handle.net/10027/8519
dc.descriptionNOTICE: this is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, Vol 54, Issue 6 , (NOV 2011) http://dx.doi.org/10.1016/j.infrared.2011.08.003en
dc.description.abstractCurrent-voltage characteristics of long-wave infrared (LWIR) InAs/GaSb strained layer superlattice photodiodes (cut-off wavelength ~10 μm), passivated with different surface passivants, have been modeled and simulated using ATLAS software from SILVACO. The simulated results are fitted to previous experimental results obtained on unpassivated devices and those passivated by silicon-dioxide (SiO2), silicon nitride (SixNy) and zinc sulfide (ZnS). Surface parameters in terms of surface recombination velocity, shunt resistance and interface trap density are extracted for different passivants. The performance of silicon-dioxide passivated diode is solely dominated by a shunt leakage path with a shunt resistance value of 0.56 Ω-cm2. Extracted electron and hole surface recombination velocities have values of 105 cm/s and 107 cm/s for unpassivated, 103 cm/s and 105 cm/s for SixNy passivated and 102 cm/s and 103 cm/s for ZnS passivated devices. Interface trap density follows a similar trend with values of 1015 cm-2, 8.5×1014 cm-2 and 1010 cm-2 for unpassivated, SixNy passivated and ZnS passivated devices respectively. The suitability and limitations of the simulation tool are discussed.en
dc.language.isoen_USen
dc.publisherElsevieren
dc.titleModeling and Simulation of Long‐Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes with Different Passivantsen
dc.typeArticleen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record